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AOL1436 - N-Channel MOSFET

Datasheet Summary

Description

The AOL1436 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

This device is ideally suite for use as a High side switch in CPU core power conversion.

Features

  • es VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6mΩ (VGS = 20V) RDS(ON) < 8.2mΩ (VGS = 12V) RDS(ON) < 11.5mΩ (VGS = 10V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D S G D Bottom tab connected to drain G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C G Current B TC=100°C Pulsed Drain CurrentC VGS ID IDM Continuous Drain Current A Avalanche CurrentC TA=25°C TA=70°C.

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Datasheet Details

Part number AOL1436
Manufacturer Alpha & Omega Semiconductors
File Size 133.42 KB
Description N-Channel MOSFET
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AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1436 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power conversion. -RoHS Compliant -Halogen and Antimony Free Green Device* Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6mΩ (VGS = 20V) RDS(ON) < 8.2mΩ (VGS = 12V) RDS(ON) < 11.
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