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AON6200 - 30V N-Channel MOSFET

Description

The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.

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AON6200 30V N-Channel MOSFET General Description The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 24A < 7.8mΩ < 11mΩ 100% UIS Tested 100% Rg Tested Top View 1 2 3 4 8 7 6 5 D G S DFN5X6 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.
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