AON6200 Datasheet | Alpha & Omega Semiconductors

Description The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low bination of RDS(ON) and Crss. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 24A < 7.8mΩ < 11mΩ 100% UIS Tested 100% Rg Tested Top View 1 2 3 4 8 7 6 5 DFN5X6 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1m H C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Maximum 30 ±20 24 18 130 13 10 28 39 35 14 1.95 1.25 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A m J W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 25 55 2.6 Max 30 64 3.5 Units ° C/W ° C/W ° C/W Rev 2: Feb 2011 .aosmd. Page 1 of 6 Free Datasheet http://../ Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) g FS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.3 100 6.5 9 9 60 0.7 1 40 870 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 340 22 0.4 12 VGS=10V, VDS=15V, ID=20A 5 2 1.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, d I/dt=500A/µs 10 20 1090 490 38 0.9 16 7 2.5 2.5 5 2 16 2 13 25 16 30 1300 640 53 1.4 20 9 3 3.5 7.8 11 11 1.85 Min 30 1 5 100 2.4 Typ Max Units V µA n A V A mΩ mΩ S V A p F p F p F Ω n C n C n C n C ns ns ns...