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AON6200L - 30V N-Channel MOSFET

General Description

The AON6200L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.

Key Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View 1 2 3 4 8 7 6 5 30V 24A < 7.8mΩ < 11mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B C Maximum 30 ±20 24 18 130 13 10 28 39 35 14 1.95 1.25 -55 to 15.

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AON6200L 30V N-Channel MOSFET General Description The AON6200L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View 1 2 3 4 8 7 6 5 30V 24A < 7.8mΩ < 11mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B C Maximum 30 ±20 24 18 130 13 10 28 39 35 14 1.95 1.