Datasheet Summary
30V N-Channel MOSFET
General Description
Product Summary
The AON6206 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low bination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
100% UIS Tested 100% Rg Tested
30V 24A
< 6.5mΩ
< 9mΩ
Top View
DFN5X6 Bottom View
PIN1
Top View
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