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AON6200 Datasheet 30v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON6200 30V N-Channel MOSFET General.

General Description

The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Conduction and switching losses are minimized due to an extremely low bination of RDS(ON) and Crss.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 24A < 7.8mΩ < 11mΩ 100% UIS Tested 100% Rg Tested Top View 1 2 3 4 8 7 6 5 D G S DFN5X6 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 30 ±20 24 18 130 13 10 28 39 35 14 1.95 1.25 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 25 55 2.6 Max 30 64 3.5 Units ° C/W ° C/W ° C/W Rev 2: Feb 2011 .aosmd.

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