Datasheet Details
| Part number | AON6240 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 342.99 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6240 Download (PDF) |
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| Part number | AON6240 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 342.99 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6240 Download (PDF) |
|
|
|
The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 40V 85A < 1.6mΩ < 2.4mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 40 ±20 85 67 355 27 22 82 336 83 33 2.3 1.5 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev 0: February 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6240 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=40V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.3 355 1.3 2.1 1.8 166 0.7 1 85 4360 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 970 30 0.5 58 VGS=10V, VDS=20V, ID=20A 24 5458 1395 103 1.0 72.8 31 14.8 10.8 14.8 VGS=10V, VDS=20V, RL=1Ω, RGEN=3
AON6240 40V N-Channel MOSFET General.
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