Datasheet Details
| Part number | AON6262E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 369.68 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 AON6262E Datasheet
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| Part number | AON6262E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 369.68 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
AON6262E Datasheet
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • ESD protected Applications • High efficiency power supply • Secondary synchronus rectifier Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 60V 40A < 6.2mΩ < 8.5mΩ HBM Class 2 DFN5x6 D Top View Bottom View Top View PIN1 PIN1 S1 S2 S3 G4 8D 7D 6D G 5D S Orderable Part Number AON6262E Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.3mH C VDS Spike I 10μs IDSM IAS EAS VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 40 40 145 23.5 18.5 23 79 72 48 19 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s 15 Maximum Junction-to-Ambient A D Steady-State RqJA 40 Maximum Junction-to-Case Steady-State RqJC 2.1 Max 20 50 2.6 Units °C/W °C/W °C/W Rev1.1: September 2023 www.aosmd.com Page 1 of 6 AON6262E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.2 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Dio
AON6262E 60V N-Channel AlphaSGT TM General.
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