Datasheet Details
| Part number | AON6502 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.59 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6502 Download (PDF) |
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| Part number | AON6502 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.59 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6502 Download (PDF) |
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|
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 2.2mΩ < 2.7mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note I 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.05mH C VGS ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 100ns TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 66 334 49 39 70 123 36 83 33 7.4 4.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14 40 1.1 Max 17 55 1.5 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev 1: September 2017 www.aosmd.com Page 1 of 6 AON6502 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS= ±20V VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG TJ=55°C TJ=125°C 30 1 V 1 µA 5 100 nA 1.5
AON6502 30V N-Channel AlphaMOS General.
| Part Number | Description |
|---|---|
| AON6500 | N-Channel MOSFET |
| AON6504 | 30V N-Channel MOSFET |
| AON6506 | N-Channel MOSFET |
| AON6508 | N-Channel MOSFET |
| AON6510 | 30V N-Channel MOSFET |
| AON6512 | 30V N-Channel MOSFET |
| AON6514 | 30V N-Channel MOSFET |
| AON6516 | N-Channel MOSFET |
| AON6520 | N-Channel MOSFET |
| AON6522 | 25V N-Channel AlphaMOS |