Datasheet Details
| Part number | AON6522 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 397.11 KB |
| Description | 25V N-Channel AlphaMOS |
| Download | AON6522 Download (PDF) |
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Overview: AON6522 25V N-Channel AlphaMOS General.
| Part number | AON6522 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 397.11 KB |
| Description | 25V N-Channel AlphaMOS |
| Download | AON6522 Download (PDF) |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 25V 200A < 0.95mW < 1.3mW Top View DFN5X6 Bottom View PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 25 ±20 200 151 450 71 57 50 125 36 83 33 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 14 40 Maximum Junction-to-Case Steady-State RqJC 1 Max 17 55 1.5 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev 1.0: September 2023 www.aosmd.com Page 1 of 6 AON6522 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 25 Zero Gate Voltage Drain Current VDS=25V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current V 1 5
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