Datasheet Details
| Part number | AON6528 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 354.31 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6528 Download (PDF) |
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Overview: AON6528 30V N-Channel AlphaMOS General.
| Part number | AON6528 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 354.31 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6528 Download (PDF) |
|
|
|
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 30A < 6.3mΩ < 9.8mΩ Top View DFN5X6 Bottom View Top View 1 8 2 7 3 6 4 5 G PIN1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain CurrentG TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 30 23 120 21 16 36 6 36 25 10 4.1 2.6 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 24 53 Maximum Junction-to-Case Steady-State RθJC 3.5 Max 30 64 5 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev 2.0: Aug.
2015 www.aosmd.com Page 1 of 6 AON6528 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.4 1.8 2.2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 4.5 6.3 mΩ 6 8.5 VGS=4.5V, ID=20A 7.1 9.8 mΩ gFS Forward Transconductance VDS=5V, ID=20A 91 S VSD Diode Forward Vol
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