Datasheet Details
| Part number | AON6512 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 415.37 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6512_AlphaOmegaSemiconductors.pdf |
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Overview: AON6512 30V N-Channel MOSFET General.
| Part number | AON6512 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 415.37 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6512_AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 210A < 1.7mW < 2.4mW Top View DFN5X6 Bottom View PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 210 130 450 54 43 70 123 36 118 45 7.4 4.7 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 14 40 Maximum Junction-to-Case Steady-State RqJC 0.8 Max 17 55 1.05 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.2.1: September 2023 www.aosmd.com Page 1 of 6 AON6512 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1 1.5 2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 1.4 1.7 1.9 2.3 mW VGS=4.5V, ID=20A 1.9 2.4 mW gFS Forward Transconductance VDS=5V, ID=20A 85 S VSD Diode For
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|---|---|---|---|
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