AON6512 - N-Channel MOSFET

Kexin Semiconductor

Features

ƽ VDS (V) = 30 V ƽ IDMAX (at VGS = 10 V) = 150 A ƽ RDS(ON) (at VGS = 10 V) < 1.7 mȍ ƽ RDS(ON) (at VGS = 4.5 V) < 2.4 mȍ S ƽ Low Gate Charge S ƽ High Current Capability S G DFN5x6-8(PDFNWB5x6-8L) D D D D Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ±20 Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche Energy L = 0.05 mH C TC=25ć 1.

Part Number	Description

Published: Dec 17, 2025 |