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AON6516 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30 V.
  • IDMAX (at VGS = 10 V) = 32 A.
  • RDS(ON) (at VGS = 10 V) < 5 mΩ.
  • RDS(ON) (at VGS = 4.5 V) < 8 mΩ.
  • Low Gate Charge.
  • High Current Capability S S S G DFN5x6-8(PDFNWB5x6-8L) D D D D.
  • Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche Energy L = 0.05 mH C VDS Spike Power D.

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SMD Type N-Channel MOSFET AON6516 (KON6516) TraMnOsiSsFtoErsT ■ Features ● VDS (V) = 30 V ● IDMAX (at VGS = 10 V) = 32 A ● RDS(ON) (at VGS = 10 V) < 5 mΩ ● RDS(ON) (at VGS = 4.5 V) < 8 mΩ ● Low Gate Charge ● High Current Capability S S S G DFN5x6-8(PDFNWB5x6-8L) D D D D ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche Energy L = 0.05 mH C VDS Spike Power Dissipation B Power Dissipation A Thermal Resistance.Junction- to-Ambient A Thermal Resistance.Junction- to-Ambient A D Thermal Resistance.