Datasheet Details
| Part number | AON6554 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 437.53 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6554 Download (PDF) |
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Overview: AON6554 30V N-Channel AlphaMOS General.
| Part number | AON6554 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 437.53 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6554 Download (PDF) |
|
|
|
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 85A < 2.9mΩ < 3.7mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 85 66 260 36 28 50 63 36 70 28 5.6 3.6 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 18 40 1.5 Max 22 55 1.8 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.1.0: March 2013 www.aosmd.com Page 1 of 6 AON6554 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±12V VDS=VGS, ID=250µA VGS=10V, ID=20A Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=20A VDS=5V, ID=20A IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C TJ=125°C 30 1.4 V 1 µA 5 ±100 nA 1.8 2.2 V 2.3 2.9 3.2
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