Datasheet Details
| Part number | AON6558 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 301.88 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6558-AlphaOmegaSemiconductors.pdf |
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Overview: AON6558 30V N-Channel AlphaMOS General.
| Part number | AON6558 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 301.88 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6558-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Application • DC/DC Converters in puting, Servers, and POL • Isolated DC/DC Converters in Tele and Industrial 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.01mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 30 24 120 25 20 40 8 36 24 9.5 5 3.2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 45 4.2 Max 25 55 5.2 30V 30A < 5.1mΩ < 8.2mΩ D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.1.0: August 2013 .aosmd.
Page 1 of 6 AON6558 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=20A VDS=5V, ID=20A IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C TJ=125°C 30 1.4 V 1 µA 5 ±100 nA 1.8 2.2 V 4.2 5.1 mΩ 6 7.
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