Datasheet Details
| Part number | AON6970 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 553.80 KB |
| Description | N-Channel MOSFET |
| Download | AON6970 Download (PDF) |
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| Part number | AON6970 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 553.80 KB |
| Description | N-Channel MOSFET |
| Download | AON6970 Download (PDF) |
|
|
|
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested Q1 30V 58A <5.4mΩ <8.5mΩ Q2 30V 85A <1.5mΩ <2.3mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% Rg Tested DFN5X6D Top View S2 S2 Bottom View G2 PHASE (S1/D2) D1 D1 PIN1 D1 D1 PIN1 G1 Top View Bottom View PHASE S1/D2 S2 D1 S1/D2 Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C Max Q2 30 ±20 85 66 340 42 33 65 106 36 78 31 4.1 2.6 -55 to 150 Units V V A VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25°C TC=100°C TA=25°C TA=70°C ±20 58 36 135 24 19 35 31 36 31 12 5 3.2 A A mJ V W W °C Avalanche Energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ Q1 20 50 3.3 Typ Q2 25 56 1.2 Max Q1 Max Q2 25 30 60 67 4 1.6 Units °C/W °C/W °C/W Rev0 : Sep 2012 www.aosmd.com Page 1 of 10 Free Datasheet http://www.datasheet4u.com/ AON6970 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125°C 1.3 1
AON6970 30V Dual Asymmetric N-Channel AlphaMOS General.
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