Latest Trench Power AlphaMOS (αMOS LV) technology
Integrated Schottky Diode (SRFET) on Low-Side
Very Low RDS(on) at 4.5VGS
Low Gate Charge
High Current Capability
RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON)
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AON6974A
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) on Low-Side • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested Q1 30V 28A <5.2mΩ <9.5mΩ Q2 30V 32A <3.3mΩ <5.