Datasheet Details
| Part number | AONS62614 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 457.97 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AONS62614-AlphaOmegaSemiconductors.pdf |
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Overview: AONS62614 60V N-Channel AlphaSGT TM General.
| Part number | AONS62614 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 457.97 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AONS62614-AlphaOmegaSemiconductors.pdf |
|
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• Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Logic Level Gate Drive • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 60V 100A < 2.5mΩ < 3.4mΩ DFN5x6 D Top View Top View Bottom View PIN1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONS62614 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.3mH C VDS Spike I Power Dissipation B 10μs TC=25°C TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 100 100 320 37 30 42 265 72 119 47.5 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 0.85 Max 20 50 1.05 Units °C/W °C/W °C/W Rev.3.0: October 2019 www.aosmd.com Page 1 of 6 AONS62614 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.2 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1
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