Datasheet Details
| Part number | AONS66612T |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 377.94 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AONS66612T-AlphaOmegaSemiconductors.pdf |
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Overview: AONS66612T 60V N-Channel AlphaSGT TM General.
| Part number | AONS66612T |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 377.94 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AONS66612T-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for Fast-Switching Applications • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 60V 275A < 1.65mΩ < 2.5mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Max Tj=175°C Top View DFN5x6 Bottom View Top View PIN1 S1 S2 S3 G4 8D 7D 6D 5D PIN1 Orderable Part Number AONS66612T Package Type DFN 5x6 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 275 195 900 48 40 48 346 250 125 7.5 5.2 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State Maximum Junction-to-Case Steady-State Symbol RqJA RqJC Typ 15 40 0.46 Max 20 50 0.6 Units °C/W °C/W °C/W Rev.2.0: May 2022 www.aosmd.com Page 1 of 6 AONS66612T Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS
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