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AONS66612 - N-Channel MOSFET

General Description

Trench Power AlphaSGTTM technology Low RDS(ON) Low Gate Charge Optimized for Fast-Switching Applications RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 60V 268A < 1.65mΩ < 2.5mΩ Applica

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AONS66612 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for Fast-Switching Applications • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 60V 268A < 1.65mΩ < 2.