| Title | |
| Description | • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,PD Adapter,TV,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 46A < 0.42Ω 21.5nC 2.8mJ Top View DFN8X8 Bottom View D D ... |
| Features |
pulsed avalanche energy G
MOSFET dv/dt ruggedness
Diode reverse recovery
VDS=0 to 400V,IF<=12A,Tj=25°C
IDSM
IAR EAR EAS dv/dt dv/dt di/dt
TC=25°C Power Dissipation B Derate above 25°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seco...
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| Datasheet |
 AONV420A70 Datasheet - 501.53KB |
| Distributor |
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| Stock | In stock |
| Price | |
| BuyNow |
 - Manufacturer a
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| Distributor | Stock | Price | BuyNow |
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