AOP601
Description
The AOP601 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The plementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. Standard Product AOP601 is Pb-free (meets ROHS & Sony 259 specifications). AOP601L is a Green Product ordering option. AOP601 and AOP601L are electrically identical.
Features n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = -10V) < 43m Ω < 58m Ω (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A
PDIP-8
S2 G2 S1/A G1 1 2 3 4 8 7 6 5 D2 D2 D1/K D1/K
D2
D1 K
P-ch N-ch
G2 S2 G1 S1 A
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation
Max p-channel -30 ±20 -6.6 -5.3 -30 2.5 1.6 -55 to...
