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Alpha & Omega Semiconductors

AOP601 Datasheet Preview

AOP601 Datasheet

Complementary Enhancement Mode Field Effect Transistor

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AOP601
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP601 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. A
Schottky diode in parallel with the n-channel FET
reduces body diode related losses. Standard
Product AOP601 is Pb-free (meets ROHS & Sony
259 specifications). AOP601L is a Green Product
ordering option. AOP601 and AOP601L are
electrically identical.
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 7.5A (VGS = 10V) -6.6A
RDS(ON)
< 28m
< 35m(VGS = -10V)
< 43m
< 58m(VGS = -4.5V)
Schottky
VDS=30V, IF=3A, VF<0.5V@1A
PDIP-8
S2 1
G2 2
8
7
D2
D2
P-ch
S1/A 3
G1 4
6
5
D1/K
D1/K
N-ch
D2 D1
K
G2 G1
A
S2 S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
7.5
6
30
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Forward Current B
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
ID
IDM
PD
TJ, TSTG
Maximum Schottky
30
4
2.7
20
2.5
1.6
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.




Alpha & Omega Semiconductors

AOP601 Datasheet Preview

AOP601 Datasheet

Complementary Enhancement Mode Field Effect Transistor

No Preview Available !

AOP601
www.DataSheet4U.com
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Thermal Characteristics: Schottky
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Symbol
RθJA
RθJL
Symbol
RθJA
RθJL
Typ
40
67
33
Typ
38
66
30
Typ
42
70
34
Max
50
80
40
Max
50
80
40
Max
50
80
40
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 3: Sept 2005
Alpha Omega Semiconductor, Ltd.


Part Number AOP601
Description Complementary Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
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AOP601 Datasheet PDF





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