AOP608
Description
The AOP608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications). AOP608L is a Green Product ordering option. AOP608 and AOP608L are electrically identical.
Features n-channel VDS (V) = 40V ID = 6.3A (VGS=10V) RDS(ON) < 33m Ω (VGS=10V) < 46m Ω (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V)
D2
D1
S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G2 S2
G1 S1
PDIP-8 n-channel p-channel Max p-channel -40 ±20 -5.5 -4.4 -20 2.5 1.6 -55 to 150 W °C A Units V V
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
±20 6.3 5 20 2.5 1.6 -55 to...
