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AOP608 - MOSFET

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General Description

The AOP608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications).

Overview

www.DataSheet4U.com AOP608 Complementary Enhancement Mode Field Effect.

Key Features

  • n-channel VDS (V) = 40V ID = 6.3A (VGS=10V) RDS(ON) < 33m Ω (VGS=10V) < 46m Ω (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Max p-channel -40 ±20 -5.5 -4.4 -20 2.5 1.6 -55 to 150 W °C A Units V V Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 Gate-Source Voltage Continuous Drain Current.

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