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AOP609 - MOSFET

Datasheet Summary

Description

The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard Product AOP609 is Pbfree (meets ROHS & Sony 259 specifications).

Features

  • n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.5A (VGS=-10V) RDS(ON) RDS(ON) < 60m Ω (VGS=10V) < 115mΩ (VGS =-10V) < 75m Ω (VGS=4.5V) < 140mΩ (VGS =-4.5V) ESD Rating: 1500V HBM 3000V HMB D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B M.

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Datasheet Details

Part number AOP609
Manufacturer Alpha & Omega Semiconductors
File Size 186.30 KB
Description MOSFET
Datasheet download datasheet AOP609 Datasheet
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www.DataSheet4U.com AOP609 Complementary Enhancement Mode Field Effect Transistor General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pbfree (meets ROHS & Sony 259 specifications). AOP609L is a Green Product ordering option. AOP609 and AOP609L are electrically identical. Features n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.5A (VGS=-10V) RDS(ON) RDS(ON) < 60m Ω (VGS=10V) < 115mΩ (VGS =-10V) < 75m Ω (VGS=4.5V) < 140mΩ (VGS =-4.
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