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AOP611 Datasheet Preview

AOP611 Datasheet

Complementary Enhancement Mode Field Effect Transistor

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AOP611
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP611 uses advanced trench
technology MOSFETs to provide excellen
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard Product AOP611
is Pb-free (meets ROHS & Sony 259
specifications). AOP611L is a Green
Product ordering option. AOP611 and
AOP611L are electrically identical.
Features
n-channel
VDS (V) = 40V
ID = 6.5A (VGS=10V)
RDS(ON)
< 35m(VGS=10V)
< 47m(VGS=4.5V)
p-channel
-40V
-5.5A (VGS = -10V)
RDS(ON)
< 52m(VGS = -10V)
< 80m(VGS = -4.5V)
ESD rating: 3000V (HBM)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G2 G1
S2
S1
PDIP-8
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain CurrentB
ID
IDM
6.5
5.3
30
TA=25°C
Power Dissipation TA=70°C
Avalanche CurrentB
Repetitive avalanche energy 0.3mHB
PD
IAR
EAR
2.5
1.6
13
25
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
p-channel
Max p-channel
-40
±20
-5.5
-4.4
-25
2.5
1.6
17
43
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
t 10s
Steady-State
Maximum Junction-to-LeadC
Steady-State
Maximum Junction-to-AmbientA
t 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
37 50 °C/W
74 90 °C/W
28 40 °C/W
35 50 °C/W
73 90 °C/W
32 40 °C/W
Alpha & Omega Semiconductor, Ltd.




Alpha & Omega Semiconductors

AOP611 Datasheet Preview

AOP611 Datasheet

Complementary Enhancement Mode Field Effect Transistor

No Preview Available !

AOP611
www.DataSheet4U.com
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
IDSS Zero Gate Voltage Drain Current
VDS=32V, VGS=0V
TJ=55°C
1
5
µA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
1 mA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1 2.2 3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6.5A
TJ=125°C
28.5
40
35
48
m
VGS=4.5V, ID=5A
38.5 47 m
gFS Forward Transconductance
VDS=5V, ID=6.5A
18 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.76 1
V
IS Maximum Body-Diode Continuous Current
3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=20V, ID=6.7A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=20V, RL=3,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=6.5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs
506
106
38
2.6 3.9
8.4
4.1
1.6
2.6
4.8
2
17
2.1
17.5
11.1
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 0: October 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.


Part Number AOP611
Description Complementary Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
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AOP611 Datasheet PDF






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