Datasheet Details
| Part number | AOSP21321 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 298.94 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOSP21321-AlphaOmegaSemiconductors.pdf |
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Overview: AOSP21321 30V P-Channel MOSFET General.
| Part number | AOSP21321 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 298.94 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOSP21321-AlphaOmegaSemiconductors.pdf |
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• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -11A < 17mΩ < 30mΩ Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View G S S S Orderable Part Number AOSP21321 Package Type SO-8 Top View 1 8 2 7 3 6 4 5 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -11 -8.5 -44 25 31 3.1 2.0 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: November 2017 www.aosmd.com Page 1 of 5 AOSP21321 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.3 VGS=-10V, ID=-11A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-8A gFS Forward Transconductance VDS=-5V, ID=-11A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistan
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| UMW | AOSP21321 | -30V P-ChanneI MOSFET | UMW |
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