Datasheet Details
| Part number | AOSS21311C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 560.42 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOSS21311C-AlphaOmegaSemiconductors.pdf |
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Overview: AOSS21311C 30V P-Channel MOSFET General.
| Part number | AOSS21311C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 560.42 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOSS21311C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS 2.0 and Halogen-Free Compliant Applications • This device is ideal for Load Switch Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection -30V -4.3A < 45mΩ < 65mΩ HBM Class 1C SOT23-3 Top View Bottom View D D D S G G S G S Orderable Part Number AOSS21311C Package Type SOT23-3 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -4.3 -3.3 -17 1.3 0.8 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 70 100 Maximum Junction-to-Lead Steady-State RqJL 63 Max 90 125 80 Units °C/W °C/W °C/W Rev.1.2: December 2021 www.aosmd.com Page 1 of 5 AOSS21311C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.2 VGS=-10V, ID=-4.3A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-3.5A gFS Forward Transconductance VDS=-5V, ID=-4.3A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr To
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