Datasheet Details
| Part number | AOTE32136C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 295.05 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AOTE32136C-AlphaOmegaSemiconductors.pdf |
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Overview: General.
| Part number | AOTE32136C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 295.05 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AOTE32136C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • Ideal for Load Switch AOTE32136C 20V N-Channel MOSFET Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) ESD protection 20V 7A < 20mΩ < 26mΩ TSSOP8 D D Top View Bottom View TSSOP-8 Top View D1/D2 1 8 D1/D2 S1 2 7 S2 G G S1 3 6 S2 G1 4 5 G2 S S Orderable Part Number AOTE32136C Package Type TSSOP-8 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 7 5.5 38 1.5 0.9 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 64 115 Maximum Junction-to-Lead Steady-State RqJL 70 Max 83 140 85 Units °C/W °C/W °C/W Rev.1.1: May 2024 www.aosmd.com Page 1 of 5 AOTE32136C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=20V, VGS=0V Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS, ID=250mA VGS=4.5V, ID=7A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=2.5V, ID=6.3A VDS=5V, ID=7A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate D
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