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Alpha & Omega Semiconductors

AOTF11N62 Datasheet Preview

AOTF11N62 Datasheet

N-Channel MOSFET

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AOTF11N62
620V,11A N-Channel MOSFET
General Description
Product Summary
The AOTF11N62 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low RDS(on), Ciss and Crss
along with guaranteed avalanche capability this device
can be adopted quickly into new and existing offline power
supply designs.
For Halogen Free add "L" suffix to part number:
AOTF11N62L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Top View
TO-220F
720V@150
11A
< 0.65
D
AOTF11N62
S
GD
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOTF11N62
AOTF11N62L
Drain-Source Voltage
VDS
620
Gate-Source Voltage
VGS
±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
11*
11*
8*
8*
39
4.8
345
690
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
50
0.4
39
0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOTF11N62
65
2.5
AOTF11N62L
65
3.2
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
Rev 1: July 2012
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOTF11N62 Datasheet Preview

AOTF11N62 Datasheet

N-Channel MOSFET

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AOTF11N62
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=620V, VGS=0V
VDS=500V, TJ=125°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
gFS
Static Drain-Source On-Resistance
Forward Transconductance
VGS=10V, ID=5.5A
VDS=40V, ID=5.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=480V, ID=11A
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=11A,
RG=25
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=11A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
620
720
V
0.67
V/ oC
1
µA
10
±100 nΑ
3.3 3.9 4.5
V
0.56 0.65
12
S
0.73 1
V
11
A
39
A
1320 1656 1990 pF
100 146 195 pF
6.5 11.2 16 pF
1.7 3.5 5.3
24 30.6 37 nC
9.6
nC
9.6
nC
39
ns
58
ns
92
ns
42
ns
400 500 600 ns
4.7
5.9 7.1
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.8A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: July 2012
www.aosmd.com
Page 2 of 6


Part Number AOTF11N62
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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AOTF11N62 Datasheet PDF






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