| Description | Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX,adapter,TV,lighting,Server power 100% UIS Tested 100% Rg Tested 700V 32A < 0.6Ω 11.5nC 1.8... |
| Features |
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VGS
ID
IDM IAR EAR EAS dv/dt
±30
8
8*
5
5*
32
1.6
1.3
19 100 20
TC=25°C Power Dissipation B Derate above 25°C
PD
96 0.8
27.5 0.2
Junction an...
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| Datasheet |
 AOTF600A60L Datasheet 483.83KB |
