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AOTF10N50FD Datasheet 10a N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode.

General Description

Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 600V@150℃ 10A < 0.75W Top View TO-220F D AOTF10N50FD S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.

Similar Datasheet

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