Datasheet Details
| Part number | AOTF10T60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 465.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF10T60 AOT10T60 Datasheet (PDF) |
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Overview: AOT10T60/AOTF10T60 600V,10A N-Channel MOSFET General.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | AOTF10T60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 465.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF10T60 AOT10T60 Datasheet (PDF) |
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Product Summary The AOT10T60 & AOTF10T60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V For Halogen Free add "L" suffix to part number: AOT10T60L & AOTF10T60L 100% UIS Tested 100% Rg Tested TO-220 D Top View TO-220F 700V 40A < 0.7Ω 23nC 3.4µJ D AOT10T60 DS G AOTF10T60 S GD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT10T60 Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C,J Repetitive avalanche energy C,J Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VDS VGS ID IDM IAR EAR EAS dv/dt 10 6.6 TC=25°C Power Dissipation B Derate above 25oC PD 208 1.7 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RθJA RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
AOT10T60 65 0.5 0.6 G S AOTF10T60 600 ±30 10* 6.6* 40 10 50 480 50 5 43 0.34 -55 to 150 AOTF10T60L 10* 6.6* 32 0.26 300 AOTF10T60 65 -2.9 AOTF10T60L 65 -3.9 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.4.0: April 2014 www.aosmd.com Page 1 of 7 AOT10T60/AOTF10T60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V, TJ=25°C
| Part Number | Description |
|---|---|
| AOTF10T60P | N-Channel MOSFET |
| AOTF10N50FD | 10A N-Channel MOSFET |
| AOTF10N50FDL | 10A N-Channel MOSFET |
| AOTF10N60 | 10A N-Channel MOSFET |
| AOTF10N65 | 10A N-Channel MOSFET |
| AOTF10N90 | N-Channel MOSFET |
| AOTF11C60 | 11A N-Channel MOSFET |
| AOTF11N60 | 11A N-Channel MOSFET |
| AOTF11N60L | 11A N-Channel MOSFET |
| AOTF11N62 | N-Channel MOSFET |