Datasheet Details
| Part number | AOTF11N62 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 381.34 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF11N62-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF11N62 620V,11A N-Channel MOSFET General.
| Part number | AOTF11N62 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 381.34 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF11N62-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOTF11N62 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOTF11N62L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-220F 720V@150℃ 11A < 0.65Ω D AOTF11N62 S GD G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOTF11N62 AOTF11N62L Drain-Source Voltage VDS 620 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 11* 11* 8* 8* 39 4.8 345 690 5 TC=25°C Power Dissipation B Derate above 25oC PD 50 0.4 39 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
AOTF11N62 65 2.5 AOTF11N62L 65 3.2 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W Rev 1: July 2012 www.aosmd.com Page 1 of 6 AOTF11N62 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=620V, VGS=0V VDS=500V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gat
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF11N62 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOTF11N60 | 11A N-Channel MOSFET |
| AOTF11N60L | 11A N-Channel MOSFET |
| AOTF11N70 | 11A N-Channel MOSFET |
| AOTF11C60 | 11A N-Channel MOSFET |
| AOTF11S60 | Power Transistor |
| AOTF11S60L | Power Transistor |
| AOTF11S65 | 650V 11A Power Transistor |
| AOTF11S65 | Power Transistor |
| AOTF11S65L | 650V 11A Power Transistor |
| AOTF10N50FD | 10A N-Channel MOSFET |