| Description | Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • Flyback for SMPS • Charger ,PD Adapter, TV, lighting. 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 800V 34A < 0.6Ω 1... |
| Features |
rain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
TC=25°C Power Dissipation B Derate above 25°C
VGS
ID
IDM IAR EAR EAS dv/dt
PD
±30
8.5
8.5*
5
5*
34
2.1
2.2
19
100 20
104
27
0.8
0.2
Junction and Storage Temperature Range
Maxim...
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| Datasheet |
 AOTF600A70L Datasheet 511.73KB |
