Datasheet Details
| Part number | AOTF66613L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 376.88 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AOTF66613L-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF66613L 60V N-Channel AlphaSGT TM General.
| Part number | AOTF66613L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 376.88 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AOTF66613L-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) Applications • High Frequency Switching and Synchronous Rectification • BLDC Top View TO220F Bottom View 100% UIS Tested 100% Rg Tested 60V 90A < 2.5mΩ < 3.0mΩ D G DS S DG G S Orderable Part Number AOTF66613L Package Type TO-220F Form Tube Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 90 57 360 44.5 35.5 48 346 34.5 13.5 8.3 5.3 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 10 45 Maximum Junction-to-Case Steady-State RqJC 3.0 Max 15 55 3.6 Units °C/W °C/W °C/W Rev.1.1: May 2024 www.aosmd.com Page 1 of 6 AOTF66613L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitan
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