Datasheet Details
| Part number | AOTF66811L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 591.28 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet | AOTF66811L-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF66811L 80V N-Channel AlphaSGT2 TM General.
| Part number | AOTF66811L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 591.28 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet | AOTF66811L-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGT2TM technology • Low RDS(ON) and optimized switching performance • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) Applications • Industrial Application • Telecom and Server Power Supply 100% UIS Tested 100% Rg Tested Top View TO220F Bottom View 80V 80A < 3mΩ < 3.4mΩ D G DS S DG G S Orderable Part Number AOTF66811L Package Type TO-220F Form Tube Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±20 80 51 320 39 31 75 281 34 14 8.3 5.3 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 10 45 Maximum Junction-to-Case Steady-State RqJC 3 Max 15 60 3.6 Units °C/W °C/W °C/W Rev 1.1: November 2021 www.aosmd.com Page 1 of 6 AOTF66811L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 80 IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.6 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output C
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