Datasheet Details
| Part number | AOTF8T50P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 746.94 KB |
| Description | 8A N-Channel MOSFET |
| Download | AOTF8T50P Download (PDF) |
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| Part number | AOTF8T50P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 746.94 KB |
| Description | 8A N-Channel MOSFET |
| Download | AOTF8T50P Download (PDF) |
|
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• Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested Top View TO-220F 600V 32A < 0.81Ω 13nC 2.5µJ D GD S AOTF8T50P Orderable Part Number AOTF8T50P AOTF8T50PL Package Type TO-220F Pb Free TO-220F Green Form Tube Tube G S Minimum Order Quantity 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOTF8T50P AOTF8T50PL Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt J VGS ID IDM IAR EAR EAS dv/dt ±30 8* 8* 5.4* 5.4* 32 8 32 421 50 15 TC=25°C Power Dissipation B Derate above 25°C PD 38 0.3 28 0.2 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
AOTF8T50P 65 3.3 AOTF8T50PL 65 4.5 Units °C/W °C/W Rev.1.0: July 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C 500 BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V VDS=400V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V V
AOTF8T50P 500V,8A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOTF8T50P | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOTF8N50 | 9A N-Channel MOSFET |
| AOTF8N60 | 8A N-Channel MOSFET |
| AOTF8N65 | 8A N-Channel MOSFET |
| AOTF8N80 | 7.4A N-Channel MOSFET |
| AOTF095A60L | N-Channel Power Transistor |
| AOTF10N50FD | 10A N-Channel MOSFET |
| AOTF10N50FDL | 10A N-Channel MOSFET |
| AOTF10N60 | 10A N-Channel MOSFET |
| AOTF10N65 | 10A N-Channel MOSFET |
| AOTF10N90 | N-Channel MOSFET |