Datasheet Details
| Part number | AOTS26108 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 514.05 KB |
| Description | 30V/20V Complementary MOSFET |
| Datasheet | AOTS26108-AlphaOmegaSemiconductors.pdf |
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Overview: AOTS26108 30V/20V Complementary MOSFET General.
| Part number | AOTS26108 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 514.05 KB |
| Description | 30V/20V Complementary MOSFET |
| Datasheet | AOTS26108-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • This device is ideal for Load Switch Product Summary N-Channel VDS= 30V ID= 3.8A (VGS=10V) RDS(ON) < 50mΩ (VGS=10V) < 57mΩ (VGS=4.5V) < 72mΩ (VGS=2.5V) ESD protection P-Channel -20V -4.5A (VGS=-4.5V) RDS(ON) < 44mΩ (VGS=-4.5V) < 59mΩ (VGS=-2.5V) < 80mΩ (VGS=-1.8V) TSOP6 Top View Bottom View Top View D D G1 1 6 D1 S2 2 5 S1 G G G2 3 4 D2 S Pin1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 30 -20 Gate-Source Voltage VGS ±12 ±8 Continuous Drain Current TA=25°C TA=70°C ID 3.8 -4.5 3 -3.6 Pulsed Drain Current C IDM 15 -18 TA=25°C Power Dissipation B TA=70°C 1.25 1.25 PD 0.80 0.80 Junction and Storage Temperature Range TJ, TSTG -55 to 150 S p-channel Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 75 105 Maximum Junction-to-Lead Steady-State RqJL 50 Max Units 100 °C/W 130 °C/W 65 °C/W Rev 1.0: April 2021 www.aosmd.com Page 1 of 9 AOTS26108 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage ID=250mA, VGS=0V VDS=30V, VGS=0V VDS=0V, VGS=±12V VDS=VGS, ID=250mA VGS=10V, ID=3.8A 30 1 TJ=55°C 5 ±10 0.5 1 1.5 40 50 RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.2A Forward Transconductance VDS=5V, ID=3.8A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 58 73 42 57 50 72 20 0.7 1 1.5 DYNAMIC PARAMETERS Ciss Input Capacitance
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