| Description | • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • Flyback for SMPS • Charger ,PD Adapter, TV, lighting. 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View TO-262F Top View Bottom 800V... |
| Features |
alanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VDS VGS VGS
ID
IDM IAR EAR EAS
dv/dt
700 ±20 ±30 12 7.6 48 3.4 5.8 50 100 20
TC=25°C Power Dissipation B Derate above 25°C
PD
156 1.25
AOWF360A70
12* 7.6*
29.5 0.23
Units V V V
A
A mJ mJ V/ns W W/°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Maximum l...
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| Datasheet |
 AOW360A70 Datasheet 653.86KB |
