| Description | • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Server power 100% UIS Tested 100% Rg Tested TO-262F D Top View Bo... |
| Features |
W) MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VGS ID
IDM IAR EAR
EAS dv/dt
Power Dissipation B
TC=25°C Derate above 25°C
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
Maximum 600 ±20 ±30 11* 7.2* 44 2.5 3.1
210 100 20 25 0.2 -55 to 150
300
Units V V ...
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| Datasheet |
 AOWF380A60C Datasheet 608.15KB |
