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AOD452 N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
VDS (V) =25V ID = 55 A (VGS = 10V)
RDS(ON) < 8.5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.5V)
100% UIS tested 100% Rg tested
Top View D
TO-252 D-PAK Bottom View
D
GS
SG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Pulsed Forward Diode CurrentC
Avalanche Current C
Repetitive avalanche energy L=0.
D452 Datasheet
