Datasheet Summary
AOD452 N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
VDS (V) =25V ID = 55 A (VGS = 10V)
RDS(ON) < 8.5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.5V)
100% UIS tested 100% Rg tested
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