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D4564841G5 - UPD4564841G5

General Description

The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

Key Features

  • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge.
  • Pulsed interface.
  • Possible to assert random column address in every cycle.
  • Quad internal banks controlled by A12 and A13 (Bank Select).
  • Byte control (×16) by LDQM and UDQM.
  • Programmable Wrap sequence (Sequential / Interleave).
  • Programmable burst length (1, 2, 4, 8 and full page).
  • Programmable /CAS latency (2 and 3).
  • Automatic prech.

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Datasheet Details

Part number D4564841G5
Manufacturer Unknown Manufacturer
File Size 0.97 MB
Description UPD4564841G5
Datasheet download datasheet D4564841G5 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. www.DataSheet4U.com The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL). These products are packaged in 54-pin TSOP (II).