AO4450
Description
The AO4450 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100% UIS Tested 100% Rg Tested
40V 7A < 30mΩ < 38mΩ
Top View
SOIC-8 Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1m H C
IDM IAS EAS
TA=25°C Power Dissipation B TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
Maximum 40 ±20 7 5.5 45 14 10 3.1 2
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 31 59 16
Max 40 75...
