Datasheet4U Logo Datasheet4U.com

AO4456 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4456 N-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is ..

suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Key Features

  • VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 5.6mΩ (VGS = 4.5V) D S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25°C TA=70°C ID.

AO4456 Distributor