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AO4459 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-6.5 A (VGS =-10V).
  • RDS(ON) ＜ 46mΩ (VGS =-10V).
  • RDS(ON) ＜ 72mΩ (VGS =-4.5V) SOP-8 +0.04 0.21 -0.02 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25°C TA=70°C Avalanche Energy Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Re.

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SMD Type P-Channel MOSFET AO4459 (KO4459) ■ Features ● VDS (V) =-30V ● ID =-6.5 A (VGS =-10V) ● RDS(ON) ＜ 46mΩ (VGS =-10V) ● RDS(ON) ＜ 72mΩ (VGS =-4.5V) SOP-8 +0.04 0.21 -0.02 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25°C TA=70°C Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Junction Storage Temperature Range L=0.1mH TA=25°C TA=70°C t ≤ 10s Steady-State Symbol VDS VGS ID IDM IAS,IAR EAS,EAR PD RthJA RthJL TJ Tstg Rating -30 ±20 -6.5 -5.3 -30 17 14 3.