| Part Number | AO4459 Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
P-Channel MOSFET AO4459 (KO4459)
■ Features
● VDS (V) =-30V ● ID =-6.5 A (VGS =-10V) ● RDS(ON) ＜ 46mΩ (VGS =-10V) ● RDS(ON) ＜ 72mΩ (VGS =-4.5V)
SOP-8
+0.04 0.21 -0.02
D
MOSFET
1.50 0.1.
* VDS (V) =-30V * ID =-6.5 A (VGS =-10V) * RDS(ON) ＜ 46mΩ (VGS =-10V) * RDS(ON) ＜ 72mΩ (VGS =-4.5V) SOP-8 +0.04 0.21 -0.02 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S * Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage . |
AO4459 Datasheet and Specifications PDF
The AO4459 is a P-Channel MOSFET.
| Part Number | AO4459 Datasheet |
|---|---|
| Description | 30V P-Channel MOSFET |
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | Product Summary The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection appl. te RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 2.1: August 2023 Page 1 of 6 AO4459 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC. |
| Part Number | AO4459 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | UMW |
| Overview | D The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Pro. RθJL 16 Max 40 75 24 S Units V V A A mJ W °C Units °C/W °C/W °C/W 1 UTD Semiconductor Co.,Limited UMW R Electrical Characteristics (TJ=25°C unless otherwise noted) AO4459 P-Channel MOSFET Symbol Parameter BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain C. |
| Part Number | AO4459 Datasheet |
|---|---|
| Description | P-Channel 30-V (D-S) MOSFET |
| Manufacturer | Freescale Semiconductor |
| Overview |
Freescale
AO4459 / MC4459
P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters .
* Low rDS(on) trench technology * Low thermal impedance * Fast switching speed Typical Applications: * White LED boost converters * Automotive Systems * Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 49 @ VGS = -10V 75 @ VGS = -4.5V VDS (V) -30 ID(A) -6.5 -5.3 ABSOLUTE MAXIMUM. |