AO4459 - P-Channel MOSFET

General Description

The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

AO4459 p-channel mosfet by UMW - Datasheet Preview

Datasheet Details

Part number	AO4459
Manufacturer	UMW
File Size	567.80 KB
Description	P-Channel MOSFET
Datasheet	AO4459 Datasheet

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Full PDF Text Transcription (Reference)

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UMW R AO4459 P-Channel MOSFET General Description D The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary G VDS = -30V ID = -6.5 A RDS(ON) < 42mΩ @ VGS=10V A p p lic a tio n Battery protection Load switch Uninterruptible power supply Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -6.5 -5.3 -30 17 14 3.