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AO4459 - P-Channel MOSFET

Datasheet Summary

Description

The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

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Datasheet Details

Part number AO4459
Manufacturer UMW
File Size 567.80 KB
Description P-Channel MOSFET
Datasheet download datasheet AO4459 Datasheet
Additional preview pages of the AO4459 datasheet.

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Full PDF Text Transcription

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UMW R AO4459 P-Channel MOSFET General Description D The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary G VDS = -30V ID = -6.5 A RDS(ON) < 42mΩ @ VGS=10V A p p lic a tio n Battery protection Load switch Uninterruptible power supply Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -6.5 -5.3 -30 17 14 3.
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