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AO4459 Datasheet P-channel MOSFET

Manufacturer: UMW

Overview: UMW R AO4459 P-Channel MOSFET General.

Datasheet Details

Part number AO4459
Manufacturer UMW
File Size 567.80 KB
Description P-Channel MOSFET
Datasheet AO4459-UMW.pdf

General Description

D The AO4459 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

Product Summary G VDS = -30V ID = -6.5 A RDS(ON) < 42mΩ @ VGS=10V A p p lic a tio n Battery protection Load switch Uninterruptible power supply Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -6.5 -5.3 -30 17 14 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 S Units V V A A mJ W °C Units °C/W °C/W °C/W .umw-ic.

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