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AO4459DY - P-Channel MOSFET

Key Features

  • ƽ VDS (V) =-30V ƽ ID =-6.5 A (VGS =-10V) ƽ RDS(ON) ˘ 46m¡ (VGS =-10V) ƽ RDS(ON) ˘ 72m¡ (VGS =-4.5V) SOP-8 +0.04 0.21 -0.02 D MOSFET 1.50 0.15 6RXUFH 6RXUFH 6RXUFH .
  • DWH 'UDLQ 'UDLQ 'UDLQ 'UDLQ G S Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Lead Junction T.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type P-Channel MOSFET AO4459'< (KO4459'<) Ƶ Features ƽ VDS (V) =-30V ƽ ID =-6.5 A (VGS =-10V) ƽ RDS(ON) ˘ 46m¡ (VGS =-10V) ƽ RDS(ON) ˘ 72m¡ (VGS =-4.5V) SOP-8 +0.04 0.21 -0.02 D MOSFET 1.50 0.15 6RXUFH 6RXUFH 6RXUFH *DWH 'UDLQ 'UDLQ 'UDLQ 'UDLQ G S Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Junction Storage Temperature Range TA=25°C TA=70°C L=0.1mH TA=25°C TA=70°C t İ 10s Steady-State Symbol VDS VGS ID IDM IAS,IAR EAS,EAR PD RthJA RthJL TJ Tstg Rating -30 f20 -6.5 -5.3 -30 17 14 3.