AO4459
Description
Product Summary
The AO4459 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V)
100% UIS Tested 100% Rg Tested
-30V -6.5A < 46m W < 72m W
SOIC-8 D
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
-30
Gate-Source Voltage
±20
Continuous Drain Current
TA=25°C TA=70°C
-6.5 -5.3
Pulsed Drain Current C
-30
Avalanche Current C
IAS, IAR
Avalanche energy L=0.1m H C
EAS, EAR
TA=25°C Power Dissipation B TA=70°C
3.1 2
Junction and Storage Temperature Range
TJ, TSTG
-55 to...
