Datasheet Summary
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AOD434 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected to a 2KV HBM rating. Standard Product AOD434 is Pbfree (meets ROHS & Sony 259 specifications). AOD434L is a Green Product ordering option. AOD434 and AOD434L are electrically identical.
Features
VDS (V) = 20V ID = 18A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 2.5V) RDS(ON) < 30mΩ (VGS = 1.8V) ESD Rating: 2KV HBM
TO-252 D-PAK
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